TSM2301ACX RFG

Symbol Micros: TTSM2301cx
Contractor Symbol:
Case : SOT23
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Tranzystor P-MOSFET; 20V; 12V; 190mOhm; 2,8A; 700mW; -55°C ~ 150°C; Odpowiednik: TSM2301CX RF; TSM2301CX-RFG; TSM2301ACX; TSM2301BCX RFG; TSM2301ACX RFG; Zamiennikiem będzie: TSM650P02CX;
Parameters
Open channel resistance: 190mOhm
Max. drain current: 2,8A
Max. power loss: 700mW
Case: SOT23
Manufacturer: TAI-SEM
Max. drain-source voltage: 20V
Max. gate-source Voltage: 12V
Manufacturer:: Taiwan Semiconductor Co., Ltd. Manufacturer part number: TSM2301ACX RFG RoHS Case style: SOT23t/r Datasheet
In stock:
14 pcs.
Quantity of pcs. 3+ 20+ 100+ 300+ 1000+
Net price (EUR) 0,3107 0,1656 0,1282 0,1185 0,1134
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Packaging:
3000/12000/144000
Manufacturer:: Taiwan Semiconductor Co., Ltd. Manufacturer part number: TSM2301CX RFG RoHS Case style: SOT23t/r Datasheet
In stock:
3000 pcs.
Quantity of pcs. 3+ 20+ 100+ 300+ 1000+
Net price (EUR) 0,3107 0,1656 0,1282 0,1185 0,1134
Add to comparison tool
Packaging:
3000
         
 
Item in delivery
Estimated date:
2026-09-30
Quantity of pcs.: 12000
         
 
Item in delivery
Estimated date:
2026-12-15
Quantity of pcs.: 12000
Open channel resistance: 190mOhm
Max. drain current: 2,8A
Max. power loss: 700mW
Case: SOT23
Manufacturer: TAI-SEM
Max. drain-source voltage: 20V
Max. gate-source Voltage: 12V
Transistor type: P-MOSFET
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD

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