SMMBT5551LT1G ON Semiconductor

Symbol Micros: TSMMBT5551

264095

TSMMBT5551

Contractor Symbol:

Case : SOT23-3

Datasheet

Technical drawing Add to favourites

Trans GP BJT NPN 160V 0.6A 300mW Automotive 3-Pin SOT-23 T/R SMMBT5551LT3G

Parameters

Power dissipation:	225mW
Manufacturer:	ON SEMICONDUCTOR
Case:	SOT23-3
Current gain factor:	80
Max. collector current:	600mA
Max collector-emmiter voltage:	160V
Operating temperature (range):	-55°C ~ 150°C

All parameters

         

 

Add inquiry (RFQ)

Item available on request

• Parameters

Power dissipation:	225mW
Manufacturer:	ON SEMICONDUCTOR
Case:	SOT23-3
Current gain factor:	80
Max. collector current:	600mA
Max collector-emmiter voltage:	160V
Operating temperature (range):	-55°C ~ 150°C
Transistor type:	NPN

Edit Symbol

Delete associated with Contractor Symbol

Symbol Micros

Are you sure you want to delete your symbols? Your Symbol Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel Delete Delete Delete All Contractor Symbols Save

Add Symbol

Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel All Contractor Symbols Save

The provided name is already taken

The symbol contains forbidden characters or is too short. The symbol can consist of upper and lower case letters, spaces, special characters: "-", "/", "." and must have at least 3 characters.