SMUN5311DW1T1G
Symbol Micros:
TSMUN5311dw1
Case : SOT363
Trans Digital BJT NPN/PNP 50V 100mA 385mW Automotive 6-Pin SOT-363 SMUN5311DW1T3G SMUN5311DW1T2G
Parameters
| Open channel resistance: | 200mOhm |
| Max. drain current: | 300mA |
| Max. power loss: | 300mW |
| Case: | SOT363-6 |
| Manufacturer: | ON SEMICONDUCTOR |
| Max. drain-source voltage: | 20V |
| Max. gate-source Voltage: | 12V |
Manufacturer:: ON-Semiconductor
Manufacturer part number: SMUN5311DW1T3G
Case style: SOT363
External warehouse:
10000 pcs.
| Quantity of pcs. | 10000+ (Please wait for the order confirmation) |
|---|---|
| Net price (EUR) | 0,0406 |
Manufacturer:: ON-Semiconductor
Manufacturer part number: SMUN5311DW1T1G
Case style: SOT363
External warehouse:
33000 pcs.
| Quantity of pcs. | 6000+ (Please wait for the order confirmation) |
|---|---|
| Net price (EUR) | 0,0310 |
| Open channel resistance: | 200mOhm |
| Max. drain current: | 300mA |
| Max. power loss: | 300mW |
| Case: | SOT363-6 |
| Manufacturer: | ON SEMICONDUCTOR |
| Max. drain-source voltage: | 20V |
| Max. gate-source Voltage: | 12V |
| Transistor type: | 2xN-MOSFET |
| Operating temperature (range): | -55°C ~ 150°C |
| Mounting: | SMD |
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