SMUN5313DW1T1G

Symbol Micros: TSMUN5313dw1

215809

TSMUN5313dw1

Contractor Symbol:

Case : SOT363

Datasheet

Technical drawing Add to favourites

Trans Digital BJT NPN/PNP 50V 100mA 385mW Automotive 6-Pin SOT-363 SMUN5313DW1T3G

Parameters

Open channel resistance:	200mOhm
Max. drain current:	300mA
Max. power loss:	300mW
Case:	SOT363-6
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	20V
Max. gate-source Voltage:	12V

All parameters

         

 

Add inquiry (RFQ)

Item available on request

• Parameters

Open channel resistance:	200mOhm
Max. drain current:	300mA
Max. power loss:	300mW
Case:	SOT363-6
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	20V
Max. gate-source Voltage:	12V
Transistor type:	2xN-MOSFET
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

Edit Symbol

Delete associated with Contractor Symbol

Symbol Micros

Are you sure you want to delete your symbols? Your Symbol Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel Delete Delete Delete All Contractor Symbols Save

Add Symbol

Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel All Contractor Symbols Save

The provided name is already taken

The symbol contains forbidden characters or is too short. The symbol can consist of upper and lower case letters, spaces, special characters: "-", "/", "." and must have at least 3 characters.