SPB20N60S5

Symbol Micros: TSPB20n60s5

57981

TSPB20n60s5

Contractor Symbol:

Case : TO263 (D2PAK)

Datasheet

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N-MOSFET 20A 600V 208W 0.19Ω

Parameters

Open channel resistance:	190mOhm
Max. drain current:	20A
Max. power loss:	208W
Case:	TO263 (D2PAK)
Manufacturer:	Siemens
Max. drain-source voltage:	600V
Transistor type:	N-MOSFET

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• Parameters

Open channel resistance:	190mOhm
Max. drain current:	20A
Max. power loss:	208W
Case:	TO263 (D2PAK)
Manufacturer:	Siemens
Max. drain-source voltage:	600V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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