SPB20N60S5

Symbol Micros: TSPB20n60s5

57981

TSPB20n60s5

Contractor Symbol:

Case : TO263 (D2PAK)

Datasheet

Technical drawing Add to favourites

N-MOSFET 20A 600V 208W 0.19Ω

Parameters

Open channel resistance:	190mOhm
Max. drain current:	20A
Max. power loss:	208W
Case:	TO263 (D2PAK)
Manufacturer:	Siemens
Max. drain-source voltage:	600V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Infineon Manufacturer part number: SPB20N60S5ATMA1 Case style: TO263 (D2PAK)  

External warehouse:

2000 pcs.

Quantity of pcs.	1000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	1,8440

Add to comparison tool Add inquiry (RFQ)

Packaging:
1000

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	190mOhm
Max. drain current:	20A
Max. power loss:	208W
Case:	TO263 (D2PAK)
Manufacturer:	Siemens
Max. drain-source voltage:	600V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

Edit Symbol

Delete associated with Contractor Symbol

Symbol Micros

Are you sure you want to delete your symbols? Your Symbol Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel Delete Delete Delete All Contractor Symbols Save

Add Symbol

Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel All Contractor Symbols Save

The provided name is already taken

The symbol contains forbidden characters or is too short. The symbol can consist of upper and lower case letters, spaces, special characters: "-", "/", "." and must have at least 3 characters.