SPD02N80C3

Symbol Micros: TSPD02n80c3

311474

TSPD02n80c3

Contractor Symbol:

Case : TO252 (DPACK)

Datasheet

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N-MOSFET 2A 800V 42W 2.7Ω SPD02N80C3ATMA1, SPD02N80C3BTMA1

Parameters

Open channel resistance:	6,5Ohm
Max. drain current:	2A
Max. power loss:	42W
Case:	TO252 (DPACK)
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	800V
Transistor type:	N-MOSFET

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• Parameters

Open channel resistance:	6,5Ohm
Max. drain current:	2A
Max. power loss:	42W
Case:	TO252 (DPACK)
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	800V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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