SPD02N80C3

Symbol Micros: TSPD02n80c3

311474

TSPD02n80c3

Contractor Symbol:

Case : TO252 (DPAK)

Datasheet

Technical drawing Add to favourites

N-MOSFET 2A 800V 42W 2.7Ω SPD02N80C3ATMA1, SPD02N80C3BTMA1

Parameters

Open channel resistance:	6,5Ohm
Max. drain current:	2A
Max. power loss:	42W
Case:	TO252 (DPACK)
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	800V
Max. gate-source Voltage:	20V

All parameters

Manufacturer:: Infineon Manufacturer part number: SPD02N80C3ATMA1 Case style: TO252 (DPAK)  

External warehouse:

42500 pcs.

Quantity of pcs.	2500+ (Please wait for the order confirmation)
Net price (EUR)	0,3630

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Packaging:
2500

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Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.

• Parameters

Open channel resistance:	6,5Ohm
Max. drain current:	2A
Max. power loss:	42W
Case:	TO252 (DPACK)
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	800V
Max. gate-source Voltage:	20V
Transistor type:	N-MOSFET
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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