SPD02N80C3
Symbol Micros:
TSPD02n80c3
Case : TO252 (DPACK)
N-MOSFET 2A 800V 42W 2.7Ω SPD02N80C3ATMA1, SPD02N80C3BTMA1
Parameters
| Open channel resistance: | 6,5Ohm |
| Max. drain current: | 2A |
| Max. power loss: | 42W |
| Case: | TO252 (DPACK) |
| Manufacturer: | Infineon Technologies |
| Max. drain-source voltage: | 800V |
| Transistor type: | N-MOSFET |
Manufacturer:: Infineon
Manufacturer part number: SPD02N80C3ATMA1
Case style: TO252 (DPACK)
External warehouse:
7500 pcs.
| Quantity of pcs. | 2500+ (Need a significantly larger quantity? Ask for price). |
|---|---|
| Net price (EUR) | 0,3470 |
Manufacturer:: Infineon
Manufacturer part number: SPD02N80C3ATMA1
Case style: TO252 (DPACK)
External warehouse:
15000 pcs.
| Quantity of pcs. | 2500+ (Need a significantly larger quantity? Ask for price). |
|---|---|
| Net price (EUR) | 0,3614 |
| Open channel resistance: | 6,5Ohm |
| Max. drain current: | 2A |
| Max. power loss: | 42W |
| Case: | TO252 (DPACK) |
| Manufacturer: | Infineon Technologies |
| Max. drain-source voltage: | 800V |
| Transistor type: | N-MOSFET |
| Max. gate-source Voltage: | 20V |
| Operating temperature (range): | -55°C ~ 150°C |
| Mounting: | SMD |
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