SPD04N80C3

Symbol Micros: TSPD04n80c3

311479

TSPD04n80c3

Contractor Symbol:

Case : TO252 (DPAK)

Datasheet

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N-MOSFET 4A 800V 63W 1.3Ω SPD04N80C3ATMA1

Parameters

Open channel resistance:	1,3Ohm
Max. drain current:	4A
Max. power loss:	63W
Case:	TO252 (DPACK)
Manufacturer:	INFINEON
Max. drain-source voltage:	800V
Max. gate-source Voltage:	20V

All parameters

Manufacturer:: Infineon Manufacturer part number: SPD04N80C3ATMA1 Case style: TO252 (DPAK)  

External warehouse:

92500 pcs.

Quantity of pcs.	2500+ (Please wait for the order confirmation)
Net price (EUR)	0,5240

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Packaging:
2500

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Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.

• Parameters

Open channel resistance:	1,3Ohm
Max. drain current:	4A
Max. power loss:	63W
Case:	TO252 (DPACK)
Manufacturer:	INFINEON
Max. drain-source voltage:	800V
Max. gate-source Voltage:	20V
Transistor type:	N-MOSFET
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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