SPD04N80C3

Symbol Micros: TSPD04n80c3

311479

TSPD04n80c3

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Case : TO252 (DPACK)

Datasheet

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N-MOSFET 4A 800V 63W 1.3Ω SPD04N80C3ATMA1

Parameters

Open channel resistance:	1,3Ohm
Max. drain current:	4A
Max. power loss:	63W
Case:	TO252 (DPACK)
Manufacturer:	INFINEON
Max. drain-source voltage:	800V
Transistor type:	N-MOSFET

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• Parameters

Open channel resistance:	1,3Ohm
Max. drain current:	4A
Max. power loss:	63W
Case:	TO252 (DPACK)
Manufacturer:	INFINEON
Max. drain-source voltage:	800V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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