SPD06N80C3

Symbol Micros: TSPD06n80c3
Contractor Symbol:
Case : TO252 (DPACK)
Transistor N-Channel MOSFET; 800V; 20V; 2,1Ohm; 6A; 83W; -55°C ~ 150°C; SPD06N80C3ATMA1, SPD06N80C3BTMA1
Parameters
Open channel resistance: 2,1Ohm
Max. drain current: 6A
Max. power loss: 83W
Case: TO252 (DPACK)
Manufacturer: Infineon Technologies
Max. drain-source voltage: 800V
Transistor type: N-MOSFET
Manufacturer:: Infineon Manufacturer part number: SPD06N80C3ATMA1 RoHS Case style: TO252 (DPACK) t/r Datasheet
In stock:
10 pcs.
Quantity of pcs. 1+ 3+ 10+ 30+ 100+
Net price (EUR) 3,7925 3,1928 2,8316 2,6533 2,5445
Add to comparison tool
Packaging:
10
Open channel resistance: 2,1Ohm
Max. drain current: 6A
Max. power loss: 83W
Case: TO252 (DPACK)
Manufacturer: Infineon Technologies
Max. drain-source voltage: 800V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD