SPD06N80C3

Symbol Micros: TSPD06n80c3

57983

TSPD06n80c3

Contractor Symbol:

Case : TO252 (DPAK)

Datasheet

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Transistor N-Channel MOSFET; 800V; 20V; 2,1Ohm; 6A; 83W; -55°C ~ 150°C; SPD06N80C3ATMA1, SPD06N80C3BTMA1

Parameters

Open channel resistance:	2,1Ohm
Max. drain current:	6A
Max. power loss:	83W
Case:	TO252 (DPAK)
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	800V
Max. gate-source Voltage:	20V

All parameters

Manufacturer:: Infineon Manufacturer part number: SPD06N80C3ATMA1 RoHS Case style: TO252 (DPACK) t/r Datasheet

In stock:

8 pcs.

Quantity of pcs.	1+	3+	10+	30+	100+
Net price (EUR)	3,7298	3,1400	2,7848	2,6095	2,5024

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Packaging:
10 Quantity (multiple: 1)

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Manufacturer:: Infineon Manufacturer part number: SPD06N80C3ATMA1 Case style: TO252 (DPAK)  

External warehouse:

35000 pcs.

Quantity of pcs.	2500+ (Please wait for the order confirmation)
Net price (EUR)	2,5024

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Packaging:
2500

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Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.

• Parameters

Open channel resistance:	2,1Ohm
Max. drain current:	6A
Max. power loss:	83W
Case:	TO252 (DPAK)
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	800V
Max. gate-source Voltage:	20V
Transistor type:	N-MOSFET
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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