SPD07N60C3

Symbol Micros: TSPD07n60c3

52273

TSPD07n60c3

Contractor Symbol:

Case : TO252 (DPAK)

Datasheet

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Transistor N-MOSFET; 650V; 20V; 1,46Ohm; 7,3A; 83W; -55°C ~ 150°C; SPD07N60C3ATMA1; SPD07N60C3BTMA1; SPD07N60C3ATMA1-0;

Parameters

Open channel resistance:	1,46Ohm
Max. drain current:	7,3A
Max. power loss:	83W
Case:	TO252 (DPACK)
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	650V
Max. gate-source Voltage:	20V

All parameters

Manufacturer:: Infineon Manufacturer part number: SPD07N60C3 RoHS Case style: TO252 (DPACK) t/r Datasheet

In stock:

0 pcs.

Quantity of pcs.	1+	5+	20+	100+	400+
Net price (EUR)	1,1024	0,7724	0,6555	0,6005	0,5799

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Packaging:
100 Quantity (multiple: 1)

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Manufacturer:: Infineon Manufacturer part number: SPD07N60C3ATMA1 Case style: TO252 (DPAK)  

External warehouse:

7500 pcs.

Quantity of pcs.	2500+ (Please wait for the order confirmation)
Net price (EUR)	0,5799

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Packaging:
2500

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• Parameters

Open channel resistance:	1,46Ohm
Max. drain current:	7,3A
Max. power loss:	83W
Case:	TO252 (DPACK)
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	650V
Max. gate-source Voltage:	20V
Transistor type:	N-MOSFET
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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