SPD09P06PL G

Symbol Micros: TSPD09p06pl

311477

TSPD09p06pl

Contractor Symbol:

Case : TO252 (DPACK)

Datasheet

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Transistor P-Channel MOSFET; 60V; 20V; 400mOhm; 9,7A; 42W; -55°C ~ 175°C; SPD09P06PLGBTMA1

Parameters

Open channel resistance:	400mOhm
Max. drain current:	9,7A
Max. power loss:	42W
Case:	TO252 (DPACK)
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	60V
Transistor type:	P-MOSFET

All parameters

Manufacturer:: Infineon Manufacturer part number: SPD09P06PLGBTMA1 RoHS Case style: TO252 (DPACK) Datasheet

In stock:

12 pcs.

Quantity of pcs.	1+	3+	10+	50+	200+
Net price (EUR)	0,9839	0,7226	0,5791	0,4967	0,4684

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Packaging:
50 Quantity (multiple: 1)

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Manufacturer:: Infineon Manufacturer part number: SPD09P06PLGBTMA1 RoHS Case style: TO252 (DPACK) t/r Datasheet

In stock:

50 pcs.

Quantity of pcs.	1+	3+	10+	50+	200+
Net price (EUR)	0,9839	0,7226	0,5791	0,4967	0,4684

Add to comparison tool Add inquiry (RFQ)

Packaging:
50 Quantity (multiple: 1)

- +

• Parameters

Open channel resistance:	400mOhm
Max. drain current:	9,7A
Max. power loss:	42W
Case:	TO252 (DPACK)
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	60V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

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