SPD18P06P G

Symbol Micros: TSPD18p06p
Contractor Symbol:
Case : TO252 (DPAK)
Transistor P-Channel MOSFET; 60V; 20V; 130mOhm; 18,6A; 80W; -55°C ~ 175°C; SPD18P06PGBTMA1
Parameters
Open channel resistance: 130mOhm
Max. drain current: 18,6A
Max. power loss: 80W
Case: TO252 (DPACK)
Manufacturer: Infineon Technologies
Max. drain-source voltage: 60V
Max. gate-source Voltage: 20V
Manufacturer:: Infineon Manufacturer part number: SPD18P06PG RoHS Case style: TO252 (DPACK) t/r Datasheet
In stock:
31 pcs.
Quantity of pcs. 1+ 3+ 10+ 50+ 200+
Net price (EUR) 1,0207 0,7487 0,5999 0,5162 0,4859
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Packaging:
50
Open channel resistance: 130mOhm
Max. drain current: 18,6A
Max. power loss: 80W
Case: TO252 (DPACK)
Manufacturer: Infineon Technologies
Max. drain-source voltage: 60V
Max. gate-source Voltage: 20V
Transistor type: P-MOSFET
Operating temperature (range): -55°C ~ 175°C
Mounting: SMD