SPD18P06P G

Symbol Micros: TSPD18p06p

311478

TSPD18p06p

Contractor Symbol:

Case : TO252 (DPACK)

Datasheet

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Transistor P-Channel MOSFET; 60V; 20V; 130mOhm; 18,6A; 80W; -55°C ~ 175°C; SPD18P06PGBTMA1

Parameters

Open channel resistance:	130mOhm
Max. drain current:	18,6A
Max. power loss:	80W
Case:	TO252 (DPACK)
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	60V
Transistor type:	P-MOSFET

All parameters

Manufacturer:: Infineon Manufacturer part number: SPD18P06PG RoHS Case style: TO252 (DPACK) t/r Datasheet

In stock:

31 pcs.

Quantity of pcs.	1+	3+	10+	50+	200+
Net price (EUR)	1,0426	0,7647	0,6127	0,5272	0,4964

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Packaging:
50 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	130mOhm
Max. drain current:	18,6A
Max. power loss:	80W
Case:	TO252 (DPACK)
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	60V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

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