SPD18P06P G
Symbol Micros:
TSPD18p06p
Case : TO252 (DPACK)
Transistor P-Channel MOSFET; 60V; 20V; 130mOhm; 18,6A; 80W; -55°C ~ 175°C; SPD18P06PGBTMA1
Parameters
| Open channel resistance: | 130mOhm |
| Max. drain current: | 18,6A |
| Max. power loss: | 80W |
| Case: | TO252 (DPACK) |
| Manufacturer: | Infineon Technologies |
| Max. drain-source voltage: | 60V |
| Transistor type: | P-MOSFET |
Manufacturer:: Infineon
Manufacturer part number: SPD18P06PG RoHS
Case style: TO252 (DPACK) t/r
Datasheet
In stock:
31 pcs.
| Quantity of pcs. | 1+ | 3+ | 10+ | 50+ | 200+ |
|---|---|---|---|---|---|
| Net price (EUR) | 1,1356 | 0,8323 | 0,6677 | 0,5737 | 0,5408 |
Manufacturer:: Infineon
Manufacturer part number: SPD18P06PGBTMA1
Case style: TO252 (DPACK)
External warehouse:
25000 pcs.
| Quantity of pcs. | 2500+ (Need a significantly larger quantity? Ask for price). |
|---|---|
| Net price (EUR) | 0,5408 |
Manufacturer:: Infineon
Manufacturer part number: SPD18P06PGBTMA1
Case style: TO252 (DPACK)
External warehouse:
75000 pcs.
| Quantity of pcs. | 2500+ (Need a significantly larger quantity? Ask for price). |
|---|---|
| Net price (EUR) | 0,5408 |
| Open channel resistance: | 130mOhm |
| Max. drain current: | 18,6A |
| Max. power loss: | 80W |
| Case: | TO252 (DPACK) |
| Manufacturer: | Infineon Technologies |
| Max. drain-source voltage: | 60V |
| Transistor type: | P-MOSFET |
| Max. gate-source Voltage: | 20V |
| Operating temperature (range): | -55°C ~ 175°C |
| Mounting: | SMD |
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