SPD50P03L G

Symbol Micros: TSPD50p03l

311476

TSPD50p03l

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Case : TO252 (DPAK)

Datasheet

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Transistor P-Channel MOSFET; 30V; 20V; 12,5mOhm; 50A; 150W; -55°C ~ 175°C; SPD50P03LGBTMA1

Parameters

Open channel resistance:	12,5mOhm
Max. drain current:	50A
Max. power loss:	150W
Case:	TO252 (DPACK)
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	30V
Max. gate-source Voltage:	20V

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• Parameters

Open channel resistance:	12,5mOhm
Max. drain current:	50A
Max. power loss:	150W
Case:	TO252 (DPACK)
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	30V
Max. gate-source Voltage:	20V
Transistor type:	P-MOSFET
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

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