SPD50P03L G

Symbol Micros: TSPD50p03l

311476

TSPD50p03l

Contractor Symbol:

Case : TO252 (DPAK)

Datasheet

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Transistor P-Channel MOSFET; 30V; 20V; 12,5mOhm; 50A; 150W; -55°C ~ 175°C; SPD50P03LGBTMA1

Parameters

Open channel resistance:	12,5mOhm
Max. drain current:	50A
Max. power loss:	150W
Case:	TO252 (DPAK)
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	30V
Max. gate-source Voltage:	20V

All parameters

Manufacturer:: Infineon Manufacturer part number: SPD50P03LGBTMA1 RoHS Case style: TO252 (DPACK) t/r Datasheet

In stock:

9 pcs.

Quantity of pcs.	1+	3+	9+	36+	117+
Net price (EUR)	1,4736	1,1189	0,9336	0,8215	0,7757

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Packaging:
9 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	12,5mOhm
Max. drain current:	50A
Max. power loss:	150W
Case:	TO252 (DPAK)
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	30V
Max. gate-source Voltage:	20V
Transistor type:	P-MOSFET
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

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