SPP04N80C3

Symbol Micros: TSPP04n80c3

87245

TSPP04n80c3

Contractor Symbol:

Case : TO220

Datasheet

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Transistor N-Channel MOSFET; 800V; 20V; 3Ohm; 4A; 63W; -55°C ~ 150°C;

Parameters

Open channel resistance:	3Ohm
Max. drain current:	4A
Max. power loss:	63W
Case:	TO220
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	800V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Infineon Manufacturer part number: SPP04N80C3XKSA1 RoHS Case style: TO220 Datasheet

In stock:

40 pcs.

Quantity of pcs.	1+	3+	10+	50+	200+
Net price (EUR)	1,3436	1,0266	0,8492	0,7451	0,7073

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Packaging:
50 Quantity (multiple: 1)

- +

Manufacturer:: Infineon Manufacturer part number: SPP04N80C3XKSA1 Case style: TO220  

External warehouse:

2500 pcs.

Quantity of pcs.	250+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,7073

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Packaging:
50

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	3Ohm
Max. drain current:	4A
Max. power loss:	63W
Case:	TO220
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	800V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

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