SPP11N80C3XKSA1

Symbol Micros: TSPP11n80c3

139976

TSPP11n80c3

Contractor Symbol:

Case : TO220

Datasheet

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N-Channel 800V 11A (Tc) 156W (Tc) Through Hole PG-TO220-3-1

Parameters

Open channel resistance:	1,05Ohm
Max. drain current:	11A
Max. power loss:	156W
Case:	TO220
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	800V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Infineon Manufacturer part number: SPP11N80C3XKSA1 RoHS Case style: TO220 Datasheet

In stock:

50 pcs.

Quantity of pcs.	1+	3+	10+	50+	200+
Net price (EUR)	3,7762	3,1967	2,8476	2,6220	2,5341

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Packaging:
50 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	1,05Ohm
Max. drain current:	11A
Max. power loss:	156W
Case:	TO220
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	800V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

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