SPP18P06P

Symbol Micros: TSPP18p06p

57990

TSPP18p06p

Contractor Symbol:

Case : TO220

Datasheet

Technical drawing Add to favourites

P-MOSFET 18.7A 60V 81.1W 0.13Ω

Parameters

Open channel resistance:	130mOhm
Max. drain current:	18,7A
Max. power loss:	81,1W
Case:	TO220
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	60V
Transistor type:	P-MOSFET

All parameters

Manufacturer:: Infineon Manufacturer part number: SPP18P06PHXKSA1 RoHS Case style: TO220 Datasheet

In stock:

50 pcs.

Quantity of pcs.	1+	3+	10+	50+	200+
Net price (EUR)	0,9429	0,6911	0,5557	0,4750	0,4489

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Packaging:
50 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	130mOhm
Max. drain current:	18,7A
Max. power loss:	81,1W
Case:	TO220
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	60V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	THT

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