SPP20N60C3

Symbol Micros: TSPP20n60c3
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Case : TO220
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N-MOSFET 20.7A 600V 208W 0.19Ω Qg=114nC
Parameters
Open channel resistance: 430mOhm
Max. drain current: 20,7A
Max. power loss: 208W
Case: TO220
Manufacturer: Infineon Technologies
Max. drain-source voltage: 650V
Transistor type: N-MOSFET
         
 
Item available on request
Open channel resistance: 430mOhm
Max. drain current: 20,7A
Max. power loss: 208W
Case: TO220
Manufacturer: Infineon Technologies
Max. drain-source voltage: 650V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: THT

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