SPP20N60C3

Symbol Micros: TSPP20n60c3
Contractor Symbol:
Case : TO220
N-MOSFET 20.7A 600V 208W 0.19Ω Qg=114nC
Parameters
Open channel resistance: 430mOhm
Max. drain current: 20,7A
Max. power loss: 208W
Case: TO220
Manufacturer: Infineon Technologies
Max. drain-source voltage: 650V
Transistor type: N-MOSFET
Manufacturer:: Infineon Manufacturer part number: SPP20N60C3 RoHS Case style: TO220 Datasheet
In stock:
90 pcs.
Quantity of pcs. 1+ 5+ 50+ 100+ 200+
Net price (EUR) 2,7514 2,2660 2,0174 1,9866 1,9653
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Packaging:
50/100
Manufacturer:: Infineon Manufacturer part number: SPP20N60C3XKSA1 Case style: TO220  
External warehouse:
1350 pcs.
Quantity of pcs. 50+ (Please wait for the order confirmation)
Net price (EUR) 1,9653
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Packaging:
50
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
Manufacturer:: Infineon Manufacturer part number: SPP20N60C3XKSA1 Case style: TO220  
External warehouse:
275450 pcs.
Quantity of pcs. 500+ (Please wait for the order confirmation)
Net price (EUR) 1,9653
Add to comparison tool
Packaging:
500
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
Manufacturer:: Infineon Manufacturer part number: SPP20N60C3XKSA1 Case style: TO220  
External warehouse:
717 pcs.
Quantity of pcs. 1+ (Please wait for the order confirmation)
Net price (EUR) 1,9653
Add to comparison tool
Packaging:
1
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
Open channel resistance: 430mOhm
Max. drain current: 20,7A
Max. power loss: 208W
Case: TO220
Manufacturer: Infineon Technologies
Max. drain-source voltage: 650V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: THT