SPP20N60C3

Symbol Micros: TSPP20n60c3

51882

TSPP20n60c3

Contractor Symbol:

Case : TO220

Datasheet

Technical drawing Add to favourites

N-MOSFET 20.7A 600V 208W 0.19Ω Qg=114nC

Parameters

Open channel resistance:	430mOhm
Max. drain current:	20,7A
Max. power loss:	208W
Case:	TO220
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	650V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Infineon Manufacturer part number: SPP20N60C3 RoHS Case style: TO220 Datasheet

In stock:

90 pcs.

Quantity of pcs.	1+	5+	50+	100+	200+
Net price (EUR)	2,7293	2,2478	2,0012	1,9706	1,9495

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Packaging:
50/100 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	430mOhm
Max. drain current:	20,7A
Max. power loss:	208W
Case:	TO220
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	650V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

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