SPP20N60S5

Symbol Micros: TSPP20n60s5

18957

TSPP20n60s5

Contractor Symbol:

Case : TO220

Datasheet

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CoolMOS 20A 600V 208W 0.19Ω Qg=103nC

Parameters

Open channel resistance:	430mOhm
Max. drain current:	20A
Max. power loss:	208W
Case:	TO220
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	600V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Infineon Manufacturer part number: SPP20N60S5XKSA1 RoHS Case style: TO220 Datasheet

In stock:

39 pcs.

Quantity of pcs.	1+	3+	10+	50+	100+
Net price (EUR)	7,5072	6,3720	5,6762	5,2154	5,1062

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Packaging:
50 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	430mOhm
Max. drain current:	20A
Max. power loss:	208W
Case:	TO220
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	600V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

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