SPP20N65C3XKSA1

Symbol Micros: TSPP20n65c3

139979

TSPP20n65c3

Contractor Symbol:

Case : TO220

Datasheet

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Trans MOSFET N-CH 650V 20.7A 3-Pin(3+Tab) TO-220AB SPP20N65C3HKSA1

Parameters

Open channel resistance:	430mOhm
Max. drain current:	20,7A
Max. power loss:	208W
Case:	TO220
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	650V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Infineon Manufacturer part number: SPP20N65C3XKSA1 RoHS Case style: TO220 Datasheet

In stock:

30 pcs.

Quantity of pcs.	1+	3+	10+	50+	200+
Net price (EUR)	3,9582	3,3501	2,9858	2,7492	2,6569

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Packaging:
50 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	430mOhm
Max. drain current:	20,7A
Max. power loss:	208W
Case:	TO220
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	650V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

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