SPP20N65C3XKSA1

Symbol Micros: TSPP20n65c3
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Case : TO220
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Trans MOSFET N-CH 650V 20.7A 3-Pin(3+Tab) TO-220AB SPP20N65C3HKSA1
Parameters
Open channel resistance: 430mOhm
Max. drain current: 20,7A
Max. power loss: 208W
Case: TO220
Manufacturer: Infineon Technologies
Max. drain-source voltage: 650V
Transistor type: N-MOSFET
Manufacturer:: Infineon Manufacturer part number: SPP20N65C3XKSA1 RoHS Case style: TO220 Datasheet
In stock:
30 pcs.
Quantity of pcs. 1+ 3+ 10+ 50+ 200+
Net price (EUR) 3,8629 3,2695 2,9139 2,6830 2,5930
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Packaging:
50
Open channel resistance: 430mOhm
Max. drain current: 20,7A
Max. power loss: 208W
Case: TO220
Manufacturer: Infineon Technologies
Max. drain-source voltage: 650V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: THT

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