SPW20N60S5

Symbol Micros: TSPW20n60s5
Contractor Symbol:
Case : TO247
Technical drawing Add to favourites
N-MOSFET 600V 2A 208W SPW20N60S5FKSA1
Parameters
Open channel resistance: 430mOhm
Max. drain current: 20A
Max. power loss: 208W
Case: TO247
Manufacturer: Infineon Technologies
Max. drain-source voltage: 600V
Transistor type: N-MOSFET
Manufacturer:: Infineon Manufacturer part number: SPW20N60S5FKSA1 RoHS Case style: TO247 Datasheet
In stock:
77 pcs.
Quantity of pcs. 1+ 3+ 10+ 30+ 90+
Net price (EUR) 7,5166 6,3730 5,6739 5,3174 5,1137
Add to comparison tool
Packaging:
30/90
Open channel resistance: 430mOhm
Max. drain current: 20A
Max. power loss: 208W
Case: TO247
Manufacturer: Infineon Technologies
Max. drain-source voltage: 600V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: THT

Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel Delete All Contractor Symbols

Add Symbol


Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel All Contractor Symbols