SPW20N60S5

Symbol Micros: TSPW20n60s5

78947

TSPW20n60s5

Contractor Symbol:

Case : TO247

Datasheet

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N-MOSFET 600V 2A 208W SPW20N60S5FKSA1

Parameters

Open channel resistance:	430mOhm
Max. drain current:	20A
Max. power loss:	208W
Case:	TO247
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	600V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Infineon Manufacturer part number: SPW20N60S5FKSA1 RoHS Case style: TO247 Datasheet

In stock:

77 pcs.

Quantity of pcs.	1+	3+	10+	30+	90+
Net price (EUR)	7,6958	6,5249	5,8092	5,4442	5,2356

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Packaging:
30/90 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	430mOhm
Max. drain current:	20A
Max. power loss:	208W
Case:	TO247
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	600V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

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