SQ2309ES-T1_GE3 Vishay

Symbol Micros: TSQ2309es

257534

TSQ2309es

Contractor Symbol:

Case : SOT23

Datasheet

Technical drawing Add to favourites

Transistor P-Channel MOSFET; 60V; 10V; 1,7A; 336mOhm; 2W; -55°C~175°C; Substitute: SQ2309ES-T1_GE3; SQ2309ES-T1-GE3; SQ2309ES-T1_GE3 VSIG; SQ2309ES-T1_BE3;

Parameters

Open channel resistance:	336mOhm
Max. drain current:	1,7A
Max. power loss:	2W
Case:	SOT23
Manufacturer:	VISHAY
Max. drain-source voltage:	60V
Max. drain-gate voltage:	4V

All parameters

Manufacturer:: Vishay Manufacturer part number: SQ2309ES-T1-GE3 RoHS 8P.. Case style: SOT23t/r Datasheet

In stock:

100 pcs.

Quantity of pcs.	2+	10+	30+	100+	400+
Net price (EUR)	0,8037	0,5059	0,4184	0,3735	0,3498

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Packaging:
100 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	336mOhm
Max. drain current:	1,7A
Max. power loss:	2W
Case:	SOT23
Manufacturer:	VISHAY
Max. drain-source voltage:	60V
Max. drain-gate voltage:	4V
Transistor type:	MOSFET
Max. gate-source Voltage:	10V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

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