SQ2318AES-T1_GE3 Vishay Siliconix

Symbol Micros: TSQ2318aes

257536

TSQ2318aes

Contractor Symbol:

Case : SOT23

Datasheet

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Transistor N-Channel MOSFET; 40V; 20V; 36mOhm; 8A; 3W; -55°C ~ 175°C; SQ2318AES-T1_GE3 VSIG;

Parameters

Open channel resistance:	36mOhm
Max. drain current:	8A
Max. power loss:	3W
Case:	SOT23
Manufacturer:	VISHAY
Max. drain-source voltage:	40V
Max. gate-source Voltage:	20V

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• Parameters

Open channel resistance:	36mOhm
Max. drain current:	8A
Max. power loss:	3W
Case:	SOT23
Manufacturer:	VISHAY
Max. drain-source voltage:	40V
Max. gate-source Voltage:	20V
Transistor type:	N-MOSFET
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

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