SQ2319ADS-T1

Symbol Micros: TSQ2319ads

130140

TSQ2319ads

Contractor Symbol:

Case : SC-59

Datasheet

Technical drawing Add to favourites

Transistor MOSFET, P-Channel, -4.6 A, 40 V, 0.068 ohm, 10 V, 2 V VISHAY SQ2319ADS-T1_BE3; SQ2319ADS-T1_GE3;

Parameters

Open channel resistance:	68mOhm
Max. drain current:	-4,6A
Max. power loss:	2,5W
Case:	SC-59
Manufacturer:	VISHAY
Max. drain-source voltage:	-40V
Transistor type:	P-MOSFET

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• Parameters

Open channel resistance:	68mOhm
Max. drain current:	-4,6A
Max. power loss:	2,5W
Case:	SC-59
Manufacturer:	VISHAY
Max. drain-source voltage:	-40V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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