SQ2361AEES-T1_GE3

Symbol Micros: TSQ2361aees

257540

TSQ2361aees

Contractor Symbol:

Case : SOT23-3

Datasheet

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Transistor P-Channel MOSFET; 60V; 20V; 170mOhm; 2.8A; 2W; -55°C~175°C; SQ2361AEES-T1-GE3; SQ2361AEES-T1_BE3;

Parameters

Open channel resistance:	170mOhm
Max. drain current:	2,8A
Max. power loss:	2W
Case:	SOT23-3
Manufacturer:	VISHAY
Max. drain-source voltage:	60V
Max. drain-gate voltage:	10V

All parameters

Manufacturer:: Vishay Manufacturer part number: SQ2361AEES-T1_GE3 RoHS 9C.. Case style: SOT23-3 t/r Datasheet

In stock:

150 pcs.

Quantity of pcs.	1+	5+	20+	100+	500+
Net price (EUR)	0,8787	0,5850	0,4840	0,4370	0,4182

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Packaging:
500 Quantity (multiple: 1)

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Manufacturer:: Vishay Manufacturer part number: SQ2361AEES-T1_GE3 RoHS 9C.. Case style: SOT23-3 t/r Datasheet

In stock:

85 pcs.

Quantity of pcs.	1+	5+	20+	100+	500+
Net price (EUR)	0,8787	0,5850	0,4840	0,4370	0,4182

Add to comparison tool Add inquiry (RFQ)

Packaging:
200 Quantity (multiple: 1)

- +

• Parameters

Open channel resistance:	170mOhm
Max. drain current:	2,8A
Max. power loss:	2W
Case:	SOT23-3
Manufacturer:	VISHAY
Max. drain-source voltage:	60V
Max. drain-gate voltage:	10V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

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