SQ2361AEES-T1_GE3

Symbol Micros: TSQ2361aees

257540

TSQ2361aees

Contractor Symbol:

Case : SOT23-3

Datasheet

Technical drawing Add to favourites

Transistor P-Channel MOSFET; 60V; 20V; 170mOhm; 2.8A; 2W; -55°C~175°C; SQ2361AEES-T1-GE3; SQ2361AEES-T1_BE3;

Parameters

Open channel resistance:	170mOhm
Max. drain current:	2,8A
Max. power loss:	2W
Case:	SOT23-3
Manufacturer:	VISHAY
Max. drain-source voltage:	60V
Max. drain-gate voltage:	10V

All parameters

Manufacturer:: Vishay Manufacturer part number: SQ2361AEES-T1_GE3 RoHS Case style: SOT23-3 t/r Datasheet

In stock:

110 pcs.

Quantity of pcs.	2+	10+	50+	300+	900+
Net price (EUR)	0,7686	0,4870	0,3831	0,3439	0,3347

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Packaging:
300 Quantity (multiple: 1)

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Manufacturer:: Vishay Manufacturer part number: SQ2361AEES-T1_GE3 RoHS Case style: SOT23-3 t/r Datasheet

In stock:

5 pcs.

Quantity of pcs.	2+	10+	50+	300+	900+
Net price (EUR)	0,7686	0,4870	0,3831	0,3439	0,3347

Add to comparison tool Add inquiry (RFQ)

Packaging:
500 Quantity (multiple: 1)

- +

• Parameters

Open channel resistance:	170mOhm
Max. drain current:	2,8A
Max. power loss:	2W
Case:	SOT23-3
Manufacturer:	VISHAY
Max. drain-source voltage:	60V
Max. drain-gate voltage:	10V
Max. gate-source Voltage:	20V
Transistor type:	P-MOSFET
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

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