SQ2389ES-T1_GE3

Symbol Micros: TSQ2389es

257542

TSQ2389es

Contractor Symbol:

Case : SOT23-3

Datasheet

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MOSFET P-CHAN 40V SO23 SQ2389ES-T1_GE3

Parameters

Open channel resistance:	188mOhm
Max. drain current:	4,1A
Max. power loss:	3W
Case:	SOT23-3
Manufacturer:	VISHAY
Max. drain-source voltage:	40V
Max. gate-source Voltage:	20V

All parameters

Manufacturer:: Vishay Manufacturer part number: SQ2389ES-T1_GE3 RoHS Case style: SOT23t/r Datasheet

In stock:

4 pcs.

Quantity of pcs.	1+	2+	5+	20+
Net price (EUR)	0,9070	0,7109	0,5516	0,4316

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Packaging:
20 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	188mOhm
Max. drain current:	4,1A
Max. power loss:	3W
Case:	SOT23-3
Manufacturer:	VISHAY
Max. drain-source voltage:	40V
Max. gate-source Voltage:	20V
Transistor type:	P-MOSFET
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

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