SQD19P06-60L_GE3

Symbol Micros: TSQD19p06-60l

130127

TSQD19p06-60l

Contractor Symbol:

Case : DPAK

Datasheet

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Transistor MOSFET, P-Channel, 20 A, 60 V, 0.046 ohm, 10 V, 2.5 V VISHAY SQD19P06-60L-E3; SQD19P06-60L_GE3; SQD19P06-60L-GE3;

Parameters

Open channel resistance:	55mOhm
Max. drain current:	20A
Max. power loss:	46W
Case:	TO252 (DPACK)
Manufacturer:	VISHAY
Max. drain-source voltage:	60V
Transistor type:	P-MOSFET

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Estimated date:
2025-08-30

Quantity of pcs.: 500

• Parameters

Open channel resistance:	55mOhm
Max. drain current:	20A
Max. power loss:	46W
Case:	TO252 (DPACK)
Manufacturer:	VISHAY
Max. drain-source voltage:	60V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

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