SQD19P06-60L_GE3

Symbol Micros: TSQD19p06-60l

130127

TSQD19p06-60l

Contractor Symbol:

Case : DPAK

Datasheet

Technical drawing Add to favourites

Transistor MOSFET, P-Channel, 20 A, 60 V, 0.046 ohm, 10 V, 2.5 V VISHAY SQD19P06-60L-E3; SQD19P06-60L_GE3; SQD19P06-60L-GE3;

Parameters

Open channel resistance:	55mOhm
Max. drain current:	20A
Max. power loss:	46W
Case:	TO252 (DPACK)
Manufacturer:	VISHAY
Max. drain-source voltage:	60V
Max. gate-source Voltage:	20V

All parameters

Manufacturer:: Siliconix Manufacturer part number: SQD19P06-60L-GE3 RoHS Case style: DPAK t/r  

In stock:

189 pcs.

Quantity of pcs.	1+	5+	20+	100+	400+
Net price (EUR)	1,2453	0,8719	0,7422	0,6784	0,6557

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Packaging:
500 Quantity (multiple: 1)

- +

Manufacturer:: Vishay Manufacturer part number: SQD19P06-60L_GE3 Case style: DPAK  

External warehouse:

4000 pcs.

Quantity of pcs.	2000+ (Please wait for the order confirmation)
Net price (EUR)	0,6557

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Packaging:
2000

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.

• Parameters

Open channel resistance:	55mOhm
Max. drain current:	20A
Max. power loss:	46W
Case:	TO252 (DPACK)
Manufacturer:	VISHAY
Max. drain-source voltage:	60V
Max. gate-source Voltage:	20V
Transistor type:	P-MOSFET
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

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