SQD50034EL_GE3 

Symbol Micros: TSQD50034EL_GE3

395813

TSQD50034EL_GE3

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Case : TO252 (DPACK) t/r

Datasheet

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MOSFETs N-CHANNEL 60-V (D-S) 175C Transistors - FETs, MOSFETs - Single

Parameters

Open channel resistance:	5,2mOhm
Max. drain current:	100A
Max. power loss:	107W
Case:	TO252 (DPACK) t/r
Manufacturer:	VISHAY
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET

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• Parameters

Open channel resistance:	5,2mOhm
Max. drain current:	100A
Max. power loss:	107W
Case:	TO252 (DPACK) t/r
Manufacturer:	VISHAY
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

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