SQJ211ELP

Symbol Micros: TSQJ211ELP

381049

TSQJ211ELP

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Datasheet

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Transistor P-Channel MOSFET; 100V; 20V; 30mOhm; 33,6A; 68W; -55°C~175°C; Substitute: SQJ211ELP-T1_GE3;

Parameters

Open channel resistance:	30mOhm
Max. drain current:	33,6A
Max. power loss:	68W
Case:	SO-8
Manufacturer:	VISHAY
Max. drain-source voltage:	100V
Transistor type:	P-MOSFET

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• Parameters

Open channel resistance:	30mOhm
Max. drain current:	33,6A
Max. power loss:	68W
Case:	SO-8
Manufacturer:	VISHAY
Max. drain-source voltage:	100V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

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