SQJ416EP-T1_GE3 Vishay Siliconix

Symbol Micros: TSQJ416ep

257632

TSQJ416ep

Contractor Symbol:

Case : PPAK-SO8

Datasheet

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MOSFET N-CH 100V 27A POWERPAKSO Trans MOSFET N-CH 100V 27A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO

Parameters

Open channel resistance:	30mOhm
Max. drain current:	27A
Max. power loss:	45W
Case:	PPAK-SO8
Manufacturer:	VISHAY
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET

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• Parameters

Open channel resistance:	30mOhm
Max. drain current:	27A
Max. power loss:	45W
Case:	PPAK-SO8
Manufacturer:	VISHAY
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

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