SQJB60EP

Symbol Micros: TSQJB60ep

301907

TSQJB60ep

Contractor Symbol:

Case : PPAK

Datasheet

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Trans MOSFET N-CH 60V 30A Automotive SQJB60EP-T1_GE3; SQJB60EP-T1_BE3; SQJB60EP-T2_GE3;

Parameters

Open channel resistance:	16mOhm
Max. drain current:	30A
Max. power loss:	48W
Case:	PPAK
Manufacturer:	VISHAY
Max. drain-source voltage:	60V
Transistor type:	2xN-MOSFET

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• Parameters

Open channel resistance:	16mOhm
Max. drain current:	30A
Max. power loss:	48W
Case:	PPAK
Manufacturer:	VISHAY
Max. drain-source voltage:	60V
Transistor type:	2xN-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

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