SQM40016EM_GE3 Vishay Siliconix

Symbol Micros: TSQM40016em

257717

TSQM40016em

Contractor Symbol:

Case : TO263

Datasheet

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MOSFET N-CHAN 40V SQM40016EM-GE3; SQM40016EM_GE3;

Parameters

Open channel resistance:	1mOhm
Max. drain current:	250A
Max. power loss:	300W
Case:	TO263
Manufacturer:	VISHAY
Max. drain-source voltage:	40V
Transistor type:	N-MOSFET

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• Parameters

Open channel resistance:	1mOhm
Max. drain current:	250A
Max. power loss:	300W
Case:	TO263
Manufacturer:	VISHAY
Max. drain-source voltage:	40V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

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