SSF60R190S2 SUPER SEMICONDUCTOR
Symbol Micros:
TSSF60r190s2
Case : TO220iso
Transistor N-Channel MOSFET; 600V; 30V; 190mOhm; 20A; 34W; -55°C ~ 150°C;
Parameters
| Open channel resistance: | 190mOhm |
| Max. drain current: | 20A |
| Max. power loss: | 34W |
| Case: | TO220iso |
| Manufacturer: | SUPER SEMICONDUCTOR |
| Max. drain-source voltage: | 600V |
| Transistor type: | N-MOSFET |
| Open channel resistance: | 190mOhm |
| Max. drain current: | 20A |
| Max. power loss: | 34W |
| Case: | TO220iso |
| Manufacturer: | SUPER SEMICONDUCTOR |
| Max. drain-source voltage: | 600V |
| Transistor type: | N-MOSFET |
| Max. gate-source Voltage: | 30V |
| Operating temperature (range): | -55°C ~ 150°C |
| Mounting: | THT |
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