SSF65R190S2 SUPER SEMICONDUCTOR

Symbol Micros: TSSF65r190s2

364846

TSSF65r190s2

Contractor Symbol:

Case : TO220iso

Datasheet

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Transistor N-Channel MOSFET; 650V; 30V; 190mOhm; 20A; 34W; -55°C ~ 150°C;

Parameters

Open channel resistance:	190mOhm
Max. drain current:	20A
Max. power loss:	34W
Case:	TO220iso
Manufacturer:	SUPER SEMICONDUCTOR
Max. drain-source voltage:	650V
Max. gate-source Voltage:	30V

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• Parameters

Open channel resistance:	190mOhm
Max. drain current:	20A
Max. power loss:	34W
Case:	TO220iso
Manufacturer:	SUPER SEMICONDUCTOR
Max. drain-source voltage:	650V
Max. gate-source Voltage:	30V
Transistor type:	N-MOSFET
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

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