SSM6J512NU

Symbol Micros: TSSM6J512NU
Contractor Symbol:
Case : uDFN06
Trans MOSFET P-CH Si 12V 10A 6-Pin UDFN-B EP Odpowiednik: SSM6J512NU,LF; SSM6J512NU,LF(T;
Parameters
Open channel resistance: 40,1mOhm
Max. drain current: 10A
Max. power loss: 1,25W
Case: UDFN6
Manufacturer: TOSHIBA
Max. drain-source voltage: 12V
Transistor type: P-MOSFET
         
 
Item available on request
Open channel resistance: 40,1mOhm
Max. drain current: 10A
Max. power loss: 1,25W
Case: UDFN6
Manufacturer: TOSHIBA
Max. drain-source voltage: 12V
Transistor type: P-MOSFET
Max. gate-source Voltage: 10V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD