SSM6N951L,EFF 

Symbol Micros: TSSM6N951L,EFF

389366

TSSM6N951L,EFF

Contractor Symbol:

Case : TCSPA6 (2.14x1.67)

Datasheet

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SMALL SIGNAL MOSFET RDSON: 4.4MO Transistors - FETs, MOSFETs - Arrays

Parameters

Open channel resistance:	5,1mOhm
Max. drain current:	8A
Max. power loss:	700mW
Case:	TCSPA (2,14x1,67)
Max. drain-source voltage:	12V
Transistor type:	2xN-MOSFET
Max. gate-source Voltage:	8V

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• Parameters

Open channel resistance:	5,1mOhm
Max. drain current:	8A
Max. power loss:	700mW
Case:	TCSPA (2,14x1,67)
Max. drain-source voltage:	12V
Transistor type:	2xN-MOSFET
Max. gate-source Voltage:	8V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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