SSP20N60S SUPER SEMICONDUCTOR

Symbol Micros: TSSP20n60s

364865

TSSP20n60s

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Case : TO220

Datasheet

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Transistor N-Channel MOSFET; 600V; 30V; 190mOhm; 20A; 205W; -55°C ~ 150°C;

Parameters

Open channel resistance:	190mOhm
Max. drain current:	20A
Max. power loss:	205W
Case:	TO220
Manufacturer:	SUPER SEMICONDUCTOR
Max. drain-source voltage:	600V
Transistor type:	N-MOSFET

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• Parameters

Open channel resistance:	190mOhm
Max. drain current:	20A
Max. power loss:	205W
Case:	TO220
Manufacturer:	SUPER SEMICONDUCTOR
Max. drain-source voltage:	600V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	30V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

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