SSP65R190S2 SUPER SEMICONDUCTOR

Symbol Micros: TSSP65r190s2

364876

TSSP65r190s2

Contractor Symbol:

Case : TO220

Datasheet

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Transistor N-Channel MOSFET; 650V; 30V; 190mOhm; 20A; 150W; -55°C ~ 150°C;

Parameters

Open channel resistance:	190mOhm
Max. drain current:	20A
Max. power loss:	150W
Case:	TO220
Manufacturer:	SUPER SEMICONDUCTOR
Max. drain-source voltage:	650V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Super Semiconductor Manufacturer part number: SSP65R190S2 RoHS Case style: TO220 Datasheet

In stock:

50 pcs.

Quantity of pcs.	1+	3+	10+	50+	200+
Net price (EUR)	1,7175	1,3697	1,1724	1,0526	1,0103

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Packaging:
50 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	190mOhm
Max. drain current:	20A
Max. power loss:	150W
Case:	TO220
Manufacturer:	SUPER SEMICONDUCTOR
Max. drain-source voltage:	650V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	30V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

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