SST60R280S2 SUPER SEMICONDUCTOR

Symbol Micros: TSST60r280s2

364884

TSST60r280s2

Contractor Symbol:

Case : TO252 (DPAK)

Datasheet

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Transistor N-Channel MOSFET; 600V; 30V; 280mOhm; 15A; 120W; -55°C ~ 150°C;

Parameters

Open channel resistance:	280mOhm
Max. drain current:	15A
Max. power loss:	120W
Case:	TO252 (DPAK)
Manufacturer:	SUPER SEMICONDUCTOR
Max. drain-source voltage:	600V
Max. gate-source Voltage:	30V

All parameters

Manufacturer:: Super Semiconductor Manufacturer part number: SST60R280S2 RoHS Case style: TO252 (DPACK) t/r Datasheet

In stock:

30 pcs.

Quantity of pcs.	1+	3+	10+	50+	200+
Net price (EUR)	1,1209	0,8566	0,7085	0,6197	0,5900

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Packaging:
50 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	280mOhm
Max. drain current:	15A
Max. power loss:	120W
Case:	TO252 (DPAK)
Manufacturer:	SUPER SEMICONDUCTOR
Max. drain-source voltage:	600V
Max. gate-source Voltage:	30V
Transistor type:	N-MOSFET
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

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