SSW20N60S SUPER SEMICONDUCTOR

Symbol Micros: TSSW20n60s

364902

TSSW20n60s

Contractor Symbol:

Case : TO247

Datasheet

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Transistor N-Channel MOSFET; 600V; 30V; 190mOhm; 20A; 151W; -55°C ~ 150°C;

Parameters

Open channel resistance:	190mOhm
Max. drain current:	20A
Max. power loss:	151W
Case:	TO247
Manufacturer:	SUPER SEMICONDUCTOR
Max. drain-source voltage:	600V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Super Semiconductor Manufacturer part number: SSW20N60S RoHS Case style: TO247 Datasheet

In stock:

25 pcs.

Quantity of pcs.	1+	5+	25+	100+	300+
Net price (EUR)	2,1084	1,6722	1,4963	1,4306	1,4048

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Packaging:
25 Quantity (multiple: 1)

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Manufacturer:: Super Semiconductor Manufacturer part number: SSW20N60S RoHS Case style: TO247 Datasheet

In stock:

5 pcs.

Quantity of pcs.	1+	5+	20+	50+	200+
Net price (EUR)	2,1084	1,6675	1,5057	1,4494	1,4048

Add to comparison tool Add inquiry (RFQ)

Packaging:
5 Quantity (multiple: 1)

- +

• Parameters

Open channel resistance:	190mOhm
Max. drain current:	20A
Max. power loss:	151W
Case:	TO247
Manufacturer:	SUPER SEMICONDUCTOR
Max. drain-source voltage:	600V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	30V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

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