SSW60R190S2 SUPER SEMICONDUCTOR

Symbol Micros: TSSW60r190s2

364912

TSSW60r190s2

Contractor Symbol:

Case : TO247

Datasheet

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Transistor N-Channel MOSFET; 600V; 30V; 190mOhm; 20A; 150W; -55°C ~ 150°C;

Parameters

Open channel resistance:	190mOhm
Max. drain current:	20A
Max. power loss:	150W
Case:	TO247
Manufacturer:	SUPER SEMICONDUCTOR
Max. drain-source voltage:	600V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Super Semiconductor Manufacturer part number: SSW60R190S2 RoHS Case style: TO247 Datasheet

In stock:

44 pcs.

Quantity of pcs.	1+	5+	30+	150+	300+
Net price (EUR)	1,9129	1,4181	1,2098	1,1388	1,1246

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Packaging:
30 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	190mOhm
Max. drain current:	20A
Max. power loss:	150W
Case:	TO247
Manufacturer:	SUPER SEMICONDUCTOR
Max. drain-source voltage:	600V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	30V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

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