STB24N60DM2

Symbol Micros: TSTB24N60DM2

132459

TSTB24N60DM2

Contractor Symbol:

Case : TO263 (D2PAK)

Datasheet

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N-MOSFET 18A 650V 150W 0.2Ω

Parameters

Open channel resistance:	200mOhm
Max. drain current:	18A
Max. power loss:	150W
Case:	D2PAK
Manufacturer:	ST
Max. drain-source voltage:	650V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: ST Manufacturer part number: STB24N60DM2 Case style: TO263 (D2PAK)  

External warehouse:

2000 pcs.

Quantity of pcs.	1000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	1,2406

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Packaging:
1000

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Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	200mOhm
Max. drain current:	18A
Max. power loss:	150W
Case:	D2PAK
Manufacturer:	ST
Max. drain-source voltage:	650V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	25V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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