STB30NF10

Symbol Micros: TSTB30NF10

132460

TSTB30NF10

Contractor Symbol:

Case : TO263 (D2PAK)

Datasheet

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N-MOSFET 35A 100V 115W 0.045Ω STB30NF10T4

Parameters

Open channel resistance:	45mOhm
Max. drain current:	35A
Max. power loss:	115W
Case:	D2PAK
Manufacturer:	ST
Max. drain-source voltage:	100V
Max. gate-source Voltage:	20V

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• Parameters

Open channel resistance:	45mOhm
Max. drain current:	35A
Max. power loss:	115W
Case:	D2PAK
Manufacturer:	ST
Max. drain-source voltage:	100V
Max. gate-source Voltage:	20V
Transistor type:	N-MOSFET
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

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