STB55NF06T4  STMicroelectronics

Symbol Micros: TSTB55NF06T4

180862

TSTB55NF06T4

Contractor Symbol:

Case : TO263 (D2PAK)

Datasheet

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Trans MOSFET N-CH 60V 50A 3-Pin(2+Tab) D2PAK T/R

Parameters

Open channel resistance:	18mOhm
Max. drain current:	50A
Max. power loss:	110W
Case:	TO263 (D2PAK)
Manufacturer:	ST
Max. drain-source voltage:	60V
Max. gate-source Voltage:	20V

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• Parameters

Open channel resistance:	18mOhm
Max. drain current:	50A
Max. power loss:	110W
Case:	TO263 (D2PAK)
Manufacturer:	ST
Max. drain-source voltage:	60V
Max. gate-source Voltage:	20V
Transistor type:	N-MOSFET
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

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