STB60NF06

Symbol Micros: TSTB60NF06
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Case : TO263 (D2PAK)
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N-MOSFET 60A 60V 110W 0.016Ω STB60NF06T4
Parameters
Open channel resistance: 16mOhm
Max. drain current: 60A
Max. power loss: 110W
Case: TO263 (D2PAK)
Manufacturer: STMicroelectronics
Max. drain-source voltage: 60V
Max. drain-gate voltage: 60V
         
 
Item available on request
Open channel resistance: 16mOhm
Max. drain current: 60A
Max. power loss: 110W
Case: TO263 (D2PAK)
Manufacturer: STMicroelectronics
Max. drain-source voltage: 60V
Max. drain-gate voltage: 60V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -65°C ~ 175°C
Mounting: SMD

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