STB60NF06L

Symbol Micros: TSTB60NF06L

132464

TSTB60NF06L

Contractor Symbol:

Case : TO263 (D2PAK)

Datasheet

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N-MOSFET 60A 60V 110W 0.014Ω STB60NF06LT4

Parameters

Open channel resistance:	16mOhm
Max. drain current:	60A
Max. power loss:	110W
Case:	TO263 (D2PAK)
Manufacturer:	STMicroelectronics
Max. drain-source voltage:	60V
Max. drain-gate voltage:	60V

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• Parameters

Open channel resistance:	16mOhm
Max. drain current:	60A
Max. power loss:	110W
Case:	TO263 (D2PAK)
Manufacturer:	STMicroelectronics
Max. drain-source voltage:	60V
Max. drain-gate voltage:	60V
Max. gate-source Voltage:	15V
Transistor type:	N-MOSFET
Operating temperature (range):	-65°C ~ 175°C
Mounting:	SMD

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