STB6N80K5  STMicroelectronics

Symbol Micros: TSTB6N80K5

180869

TSTB6N80K5

Contractor Symbol:

Case : TO263 (D2PAK)

Datasheet

Technical drawing Add to favourites

Transistor N-Channel MOSFET; 800V; 30V; 1,6Ohm; 4,5A; 85W; -55°C ~ 150°C;

Parameters

Open channel resistance:	1,6Ohm
Max. drain current:	4,5A
Max. power loss:	85W
Case:	TO263 (D2PAK)
Manufacturer:	STMicroelectronics
Max. drain-source voltage:	800V
Max. gate-source Voltage:	30V

All parameters

Manufacturer:: ST Manufacturer part number: STB6N80K5 Case style: TO263 (D2PAK)  

External warehouse:

90000 pcs.

Quantity of pcs.	1000+ (Please wait for the order confirmation)
Net price (EUR)	0,8270

Add inquiry (RFQ)

Packaging:
1000

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.

Manufacturer:: ST Manufacturer part number: STB6N80K5 Case style: TO263 (D2PAK)  

External warehouse:

2000 pcs.

Quantity of pcs.	1000+ (Please wait for the order confirmation)
Net price (EUR)	0,8324

Add to comparison tool Add inquiry (RFQ)

Packaging:
1000

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.

• Parameters

Open channel resistance:	1,6Ohm
Max. drain current:	4,5A
Max. power loss:	85W
Case:	TO263 (D2PAK)
Manufacturer:	STMicroelectronics
Max. drain-source voltage:	800V
Max. gate-source Voltage:	30V
Transistor type:	N-MOSFET
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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