STB7NK80Z

Symbol Micros: TSTB7NK80Z

132465

TSTB7NK80Z

Contractor Symbol:

Case : TO263 (D2PAK)

Datasheet

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Transistor N-Channel MOSFET; 800V; 30V; 1,8Ohm; 5,2A; 125W; -55°C ~ 150°C; STB7NK80ZT4

Parameters

Open channel resistance:	1,8Ohm
Max. power loss:	125W
Max. drain current:	5,2A
Case:	TO263 (D2PAK)
Manufacturer:	STMicroelectronics
Max. drain-source voltage:	800V
Transistor type:	N-MOSFET

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• Parameters

Open channel resistance:	1,8Ohm
Max. power loss:	125W
Max. drain current:	5,2A
Case:	TO263 (D2PAK)
Manufacturer:	STMicroelectronics
Max. drain-source voltage:	800V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	30V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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