STB80NF10

Symbol Micros: TSTB80NF10
Contractor Symbol:
Case : TO263 (D2PAK)
Transistor N-Channel MOSFET; 100V; 20V; 15mOhm; 80A; 300W; -55°C ~ 175°C; STB80NF10T4
Parameters
Open channel resistance: 15mOhm
Max. drain current: 80A
Max. power loss: 300W
Case: TO263 (D2PAK)
Manufacturer: STMicroelectronics
Max. drain-source voltage: 100V
Transistor type: N-MOSFET
Manufacturer:: ST Manufacturer part number: STB80NF10T4 RoHS Case style: TO263 (D2PAK) Datasheet
In stock:
20 pcs.
Quantity of pcs. 1+ 5+ 20+ 100+ 300+
Net price (EUR) 2,2952 1,8216 1,6472 1,5576 1,5294
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Packaging:
20
Manufacturer:: ST Manufacturer part number: STB80NF10T4 Case style: TO263 (D2PAK)  
External warehouse:
2000 pcs.
Quantity of pcs. 1000+ (Please wait for the order confirmation)
Net price (EUR) 1,5294
Add to comparison tool
Packaging:
1000
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
Manufacturer:: ST Manufacturer part number: STB80NF10T4 Case style: TO263 (D2PAK)  
External warehouse:
4000 pcs.
Quantity of pcs. 1000+ (Please wait for the order confirmation)
Net price (EUR) 1,5294
Add to comparison tool
Packaging:
1000
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
Manufacturer:: ST Manufacturer part number: STB80NF10T4 Case style: TO263 (D2PAK)  
External warehouse:
450 pcs.
Quantity of pcs. 5+ (Please wait for the order confirmation)
Net price (EUR) 1,5294
Add to comparison tool
Packaging:
5
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
Open channel resistance: 15mOhm
Max. drain current: 80A
Max. power loss: 300W
Case: TO263 (D2PAK)
Manufacturer: STMicroelectronics
Max. drain-source voltage: 100V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 175°C
Mounting: SMD