STB9NK60Z

Symbol Micros: TSTB9NK60Z

132468

TSTB9NK60Z

Contractor Symbol:

Case : TO263 (D2PAK)

Datasheet

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Transistor N-Channel MOSFET; 600V; 30V; 950mOhm; 7A; 125W; -55°C ~ 150°C; STB9NK60ZT4

Parameters

Open channel resistance:	950mOhm
Max. drain current:	7A
Max. power loss:	125W
Case:	TO263 (D2PAK)
Manufacturer:	STMicroelectronics
Max. drain-source voltage:	600V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: ST Manufacturer part number: STB9NK60ZT4 RoHS Case style: TO263 (D2PAK) Datasheet

In stock:

50 pcs.

Quantity of pcs.	1+	5+	20+	50+	200+
Net price (EUR)	1,2353	0,8600	0,7272	0,6852	0,6503

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Packaging:
5/50 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	950mOhm
Max. drain current:	7A
Max. power loss:	125W
Case:	TO263 (D2PAK)
Manufacturer:	STMicroelectronics
Max. drain-source voltage:	600V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	30V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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