STD10N60M2 DPAK

Symbol Micros: TSTD10n60m2

88351

TSTD10n60m2

Contractor Symbol:

Case : DPAK

Datasheet

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N-MOSFET 600V 7.5A 85W

Parameters

Open channel resistance:	600mOhm
Max. drain current:	7,5A
Max. power loss:	85W
Case:	D-PAK
Manufacturer:	ST
Max. drain-source voltage:	600V
Transistor type:	N-MOSFET

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• Parameters

Open channel resistance:	600mOhm
Max. drain current:	7,5A
Max. power loss:	85W
Case:	D-PAK
Manufacturer:	ST
Max. drain-source voltage:	600V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	25V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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