STD10NM60N DPAK

Symbol Micros: TSTD10nm60n
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Case : DPAK
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N-MOSFET 600V 8A 70W 0.55Ω
Parameters
Open channel resistance: 550mOhm
Max. drain current: 10A
Max. power loss: 70W
Case: DPAK
Manufacturer: STMicroelectronics
Max. drain-source voltage: 650V
Transistor type: N-MOSFET
         
 
Item available on request
Open channel resistance: 550mOhm
Max. drain current: 10A
Max. power loss: 70W
Case: DPAK
Manufacturer: STMicroelectronics
Max. drain-source voltage: 650V
Transistor type: N-MOSFET
Max. gate-source Voltage: 25V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD

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