STD10NM60N DPAK

Symbol Micros: TSTD10nm60n

85566

TSTD10nm60n

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Case : DPAK

Datasheet

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N-MOSFET 600V 8A 70W 0.55Ω

Parameters

Open channel resistance:	550mOhm
Max. drain current:	10A
Max. power loss:	70W
Case:	DPAK
Manufacturer:	STMicroelectronics
Max. drain-source voltage:	650V
Transistor type:	N-MOSFET

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• Parameters

Open channel resistance:	550mOhm
Max. drain current:	10A
Max. power loss:	70W
Case:	DPAK
Manufacturer:	STMicroelectronics
Max. drain-source voltage:	650V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	25V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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