STD10NM60N DPAK

Symbol Micros: TSTD10nm60n

85566

TSTD10nm60n

Contractor Symbol:

Case : DPAK

Datasheet

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N-MOSFET 600V 8A 70W 0.55Ω

Parameters

Open channel resistance:	550mOhm
Max. drain current:	10A
Max. power loss:	70W
Case:	DPAK
Manufacturer:	STMicroelectronics
Max. drain-source voltage:	650V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: ST Manufacturer part number: STD10NM60N Case style: DPAK  

External warehouse:

2500 pcs.

Quantity of pcs.	2500+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,4009

Add to comparison tool Add inquiry (RFQ)

Packaging:
2500

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

Manufacturer:: ST Manufacturer part number: STD10NM60N Case style: DPAK  

External warehouse:

5000 pcs.

Quantity of pcs.	2500+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,4425

Add to comparison tool Add inquiry (RFQ)

Packaging:
2500

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	550mOhm
Max. drain current:	10A
Max. power loss:	70W
Case:	DPAK
Manufacturer:	STMicroelectronics
Max. drain-source voltage:	650V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	25V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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